Analysis of drain current saturation behaviour in GaN polarisation super junction HFETs
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چکیده
منابع مشابه
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complies with the regulations of the University and meets the accepted standards with respect to originality and quality. During the past two decades AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) have been the target of much attention in high power microwave applications. Crystal imperfections in AlGaN/GaN HFETs have been pointed out as the cause of many reliability concerns such a...
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ژورنال
عنوان ژورنال: IET Power Electronics
سال: 2018
ISSN: 1755-4543,1755-4543
DOI: 10.1049/iet-pel.2018.5583